节点文献
Biological Effects of Low Energy Ar~+Ion Bombardment on Silkworm Eggs:a Novel Animal Model
【摘要】 <正> In this study,we found for the first time that silkworm eggs were able to survivein vacuum for a long period of time.Subsequently,low energy Ar+ions with different energiesand fluences were used to bombard silkworm eggs so as to explore the resulting biological effects.Results showed that(i)the exposure of silkworm eggs to vacuum within 10 min did not causesignificant impact on the hatching rates,while the irradiation of silkworm eggs by Ar+ions of25 keV or 30 keV with fluences ranging from 2.6×2.6×1015ion/cm2 to 8×2.6×1015ion/cm2caused a significant impact on the hatching rates,and the hatching rates decreased with theincrease in the fluence and energy level;(ii)the irradiation of silkworm eggs by Ar+ions of 30 keVwith a fluence of 8×2.6×1015ion/cm2 or 9×2.6×1015ion/cm2 resulted in a noticeable etchingon the egg shell surface which could be observed by a scanning electron microscope;and(iii)the irradiation of silkworm eggs by Ar+ions of 30 keV with a fluence of 9×2.6×1015ion/cm2generated several mutant phenotypes which were observed in the 5thinstar silkworms and a moth.
【Abstract】 In this study,we found for the first time that silkworm eggs were able to survive in vacuum for a long period of time.Subsequently,low energy Ar+ions with different energies and fluences were used to bombard silkworm eggs so as to explore the resulting biological effects. Results showed that(i)the exposure of silkworm eggs to vacuum within 10 min did not cause significant impact on the hatching rates,while the irradiation of silkworm eggs by Ar+ions of 25 keV or 30 keV with fluences ranging from 2.6×2.6×1015ion/cm2 to 8×2.6×1015ion/cm2 caused a significant impact on the hatching rates,and the hatching rates decreased with the increase in the fluence and energy level;(ii)the irradiation of silkworm eggs by Ar+ions of 30 keV with a fluence of 8×2.6×1015ion/cm2 or 9×2.6×1015ion/cm2 resulted in a noticeable etching on the egg shell surface which could be observed by a scanning electron microscope;and(iii) the irradiation of silkworm eggs by Ar+ions of 30 keV with a fluence of 9×2.6×1015ion/cm2 generated several mutant phenotypes which were observed in the 5thinstar silkworms and a moth.
【Key words】 low energy Ar~+ ion; silkworm egg; etching effect; hatching rate; mutation;
- 【文献出处】 Plasma Science and Technology ,等离子体科学和技术(英文版) , 编辑部邮箱 ,2009年03期
- 【分类号】Q967
- 【被引频次】1