Structural Evolution of SiC Films During Plasma-Assisted Chemical Vapour Deposition

【摘要】 <正> Evolution of chemical bonding configurations for the films deposited from hexam-ethyldisiloxane（HMDSO）diluted with H₂ during plasma assisted chemical vapour deposition isinvestigated.In the experiment a small amount of CH₄ was added to adjust the plasma environ-ment and modify the structure of the deposited Alms.The measurements of Raman spectroscopyand X-ray diffraction（XRD）revealed the production of 6H-SiC embedded in the amorphous ma-trix without the input of CH₄.As CH₄ was introduced into the deposition reaction,the transitionof 6H-SiC to cubic SiC in the films took place,and also the film surfaces changed from a struc-ture of ellipsoids to cauliflower-like shapes.With a further increase of CH₄ in the flow ratio,theobtained films varied from Si-C bonding dominant to a sp²/sp³ carbon-rich composition.更多还原

【Abstract】 Evolution of chemical bonding configurations for the films deposited from hexam- ethyldisiloxane（HMDSO）diluted with H₂ during plasma assisted chemical vapour deposition is investigated.In the experiment a small amount of CH₄ was added to adjust the plasma environ- ment and modify the structure of the deposited Alms.The measurements of Raman spectroscopy and X-ray diffraction（XRD）revealed the production of 6H-SiC embedded in the amorphous ma- trix without the input of CH₄.As CH₄ was introduced into the deposition reaction,the transition of 6H-SiC to cubic SiC in the films took place,and also the film surfaces changed from a struc- ture of ellipsoids to cauliflower-like shapes.With a further increase of CH₄ in the flow ratio,the obtained films varied from Si-C bonding dominant to a sp²/sp³ carbon-rich composition.更多还原