【摘要】 采用真空蒸镀法在Si(111)基板上制备了ZnS光学薄膜,并系统研究了蒸发温度、沉积时间、基板距蒸发源的位置等因素对所制备薄膜物相及显微结构的影响。用X-射线衍射(XRD)、原子力显微镜(AFM)对制备的薄膜进行了表征。结果表明:制备薄膜的物相主要以β-ZnS闪锌矿(Sphalerite)为主,并有少量的α-ZnS纤锌矿(Wurtzite),薄膜具有(111)结晶取向的生长特征。当沉积温度为1200℃时,所制备薄膜的结晶性能较好,随沉积时间延长,薄膜的结晶性能降低。更多还原

【Abstract】 ZnS thin films were prepared on Si(111) substrate using a vacuum evaporation process. The factors of preparing the thin film such as evaporation temperature,deposition time and the distance between substrate and evaporation source were systematically studied. Samples as-prepared were characterized by X-ray diffraction (XRD) and atomic force microscopy (AFM). Results show that the structure of prepared ZnS thin film is composited mainly of β-ZnS (Sphalerite) and a little amount of α-ZnS (Wurtzite); the deposited thin film has an obvious crystal orientation along (111) direction; at the temperature of 1200 ℃,films with good crystalline performance were obtained; with the evaporation time prolonging the crystallization performance of ZnS thin films decreased.更多还原