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基于柱状ZnO薄膜的超低阈值电压压敏电阻
Ultra-Low-Threshold Varistors Based on Columnar ZnO Thin Films
【摘要】 利用磁控溅射法在玻璃衬底上制备了基于柱状ZnO薄膜的Al-ZnO-Al三明治结构的超低阈值电压的压敏电阻。XRD和SEM测试结果表明,该压敏电阻中的ZnO薄膜层为结晶性能良好,并且沿ZnO的(002)晶面择优取向生长的柱状薄膜。I-V测试结果表明,这种由柱状ZnO薄膜构成的压敏电阻阈值电压仅3.2 V,为现有压敏电阻中阈值电压最低的压敏电阻。
【Abstract】 Ultra-low-threshold thin film varistors based on columnar ZnO thin film of Al-ZnO-Al sandwiched structure have been fabricated by DC magnetron sputtering deposition.X-ray diffraction(XRD) analysis indicates that ZnO thin films have good crystalline quality and were grown in a preferential c-axis(002) orientation.Small angle XRD and SEM analysis shows that the thickness of ZnO thin film is about 200nm,with c-axis oriented columnar structures.I-V characteristics show that the threshold voltage of the varistors is only about 3.2 V,which is the lowest value ever reported.
- 【文献出处】 材料科学与工程学报 ,Journal of Materials Science and Engineering , 编辑部邮箱 ,2009年01期
- 【分类号】TB383.2
- 【被引频次】13
- 【下载频次】254