【摘要】 场效应晶体管是现代微电子技术的重要组成部分。为制备氧化锌薄膜晶体管,分析了氧化锌的p型、n型掺杂特性,对p型掺杂进行了实验分析和理论探讨,比较了各种制备氧化锌薄膜晶体管的工艺特点,展示了ZnO在未来电子和光电子领域的潜在应用。更多还原

【Abstract】 The field effect transistor is an important constituent part of modern micro-electronics. For the pre-paration of ZnO thin film transistor, in the present paper the properties of p-type doping and n-type doping of ZnO film are analyzed. The experiment result is analyzed and its theories are explored and discussed. Several kinds of pre-paration methods are analyzed, and the properties of the preparation methods of the ZnO films transistor are compared. The potential application of ZnO in the future electronic and opto-electronic fields is shown.更多还原