【摘要】 采用溶胶-凝胶法在ITO/glass衬底上制备了BiFeO3薄膜,退火温度分别为500℃和550℃。实验结果表明,550℃退火的薄膜晶粒较大且不均匀,并有杂相产生,薄膜的漏电流较大,没有得到饱和的电滞回线;而在500℃退火的薄膜晶粒较小且均匀,没有杂相产生,相对于550℃退火的薄膜,其漏电流密度降低了约2个数量级,铁电性得到明显增强,剩余极化强度约为40μC/cm2,矫顽场约为75kV/cm,最大的测试电场为130kV/cm。更多还原

【Abstract】 The sol-gel process is adopted to prepare BiFeO3 films on ITO/glass substrates annealed at 500℃ and 550℃.The experiment results show that the film annealed at 550℃ has larger,more asymmetric grains and impurity phase.In addition,the unsaturated ferroelectric hysteresis loop is obtained and the leakage current of the film is larger when the one annealed at 550℃,while smaller grains with no impurity phase are observed in the film annealed at 500℃.More intensely ferroelectric property is gained,and the leakage current of the films is reduced for nearly two orders of magnitude than that of the film annealed at 500℃.The ferroelectric properties get enhanced,and the remnant polarization and coercive field are observed to be 40μC/cm2 and 75kV/cm under 130kV/cm.更多还原