【摘要】 为了研究单根纳米线的电学性能及基于纳米线器件的性能表征,在扫描电镜中采用微操纵仪系统,构成测试单根ZnO纳米线的电流-电压(I-V)曲线的两探针装置.测量得到基本线性、典型整流型、基本对称和非对称的I-V曲线.采用金属-半导体-金属(M-S-M)模型和热电子发射理论分析了I-V曲线的特征.ZnO纳米线的导通电流主要取决于纳米线与2个钨电极的M-S-M结的接触程度.ZnO纳米线电学性能的计算表明,由基本线性I-V特征计算的电阻率为4.2Ω.cm;整流型I-V特性曲线的有效势垒高度为0.47 eV.更多还原

【Abstract】 To study the electrical properties of single nanowire and device based on nanowire,a two-probe configuration setup was built for measuring current-voltage(I-V) curves of individual ZnO nanowire with a micromanipulator system in a scanning electron microscope.The I-V curves of ZnO nanowires,i.e.,almost linear,typical rectifying,almost symmetric and asymmetric were obtained.I-V characteristics are explained by a metal-semiconductor-metal(M-S-M) model and the thermionic emission theory.The current of ZnO nanowires mainly depends on the degree of coupling between the nanowire and two contact tungsten electrodes.The calculation results of electrical properties for ZnO nanowires shows that the resistance of almost linear curve is 4.2 Ω·cm;the effective Schottky barrier height of rectifying I-V characteristics is 0.47 eV.更多还原