A symbolically defined InP double heterojunction bipolar transistor large-signal model

【摘要】 A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors (DHBTs) is implemented as a seven-port symbolically defined device (SDD) in Agilent ADS.The model accounts for most physical phenomena including the self-heating effect,Kirk effect,soft knee effect,base collector capacitance and collector transit time.The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC,multi-bias small signal S parameters for InP DHBTs.更多还原

【Abstract】 A self-built accurate and flexible large-signal model based on an analysis of the characteristics of InP double heterojunction bipolar transistors (DHBTs) is implemented as a seven-port symbolically defined device (SDD) in Agilent ADS.The model accounts for most physical phenomena including the self-heating effect,Kirk effect,soft knee effect,base collector capacitance and collector transit time.The validity and the accuracy of the large-signal model are assessed by comparing the simulation with the measurement of DC,multi-bias small signal S parameters for InP DHBTs.更多还原