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Influence of annealed ohmic contact metals on electron mobility of strained AlGaN/GaN heterostructures

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【作者】 赵建芝； 林兆军； Corrigan T D； 张宇； 李惠军； 王占国；

【Author】 Zhao Jianzhi1,Lin Zhaojun1,Corrigan T D2,Zhang Yu1,Li Huijun3, and Wang Zhanguo4 (1 School of Physics,Shandong University,Jinan 250100,China) (2 Department of Physics,University of Maryland,College Park,Maryland 20740,USA) (3 School of Information Science and Engineering,Shandong University,Jinan 250100,China) (4 Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences,Beijing 100083,China)

【机构】 School of Physics,Shandong University； Department of Physics,University of Maryland,College Park,Maryland 20740,USA； School of Information Science and Engineering,Shandong University； Key Laboratory of Semiconductor Materials Science,Institute of Semiconductors,Chinese Academy of Sciences；

【摘要】 The influence of annealed ohmic contact metals on the electron mobility of a two dimensional electron gas(2DEG)is investigated on ungated AlGaN/GaN heterostructures and AlGaN/GaN heterostructure field effect transistors(AlGaN/GaN HFETs).Current–voltage(I–V)characteristics for ungated AlGaN/GaN heterostructures and capacitance–voltage(C–V)characteristics for AlGaN/GaN HFETs are obtained,and the electron mobility for the ungated AlGaN/GaN heterostructure is calculated.It is found that the electron mobility of the 2DEG for the ungated AlGaN/GaN heterostructure is decreased by more than 50%compared with the electron mobility of Hall measurements.We propose that defects are introduced into the AlGaN barrier layer and the strain of the AlGaN barrier layer is changed during the annealing process of the source and drain,causing the decrease in the electron mobility.

【Abstract】 The influence of annealed ohmic contact metals on the electron mobility of a two dimensional electron gas(2DEG)is investigated on ungated AlGaN/GaN heterostructures and AlGaN/GaN heterostructure field effect transistors(AlGaN/GaN HFETs).Current–voltage(I–V)characteristics for ungated AlGaN/GaN heterostructures and capacitance–voltage(C–V)characteristics for AlGaN/GaN HFETs are obtained,and the electron mobility for the ungated AlGaN/GaN heterostructure is calculated.It is found that the electron mobility of the 2DEG for the ungated AlGaN/GaN heterostructure is decreased by more than 50%compared with the electron mobility of Hall measurements.We propose that defects are introduced into the AlGaN barrier layer and the strain of the AlGaN barrier layer is changed during the annealing process of the source and drain,causing the decrease in the electron mobility.

【关键词】 AlGaN/GaN heterostructure； anneal； ohmic contact metals； 2DEG； electron mobility；
【Key words】 AlGaN/GaN heterostructure； anneal； ohmic contact metals； 2DEG； electron mobility；
【基金】 supported by the National Natural Science Foundation of China(No.10774090);the State Key Development Program for Basic Research of China(No.2007CB936602)
  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2009年10期
  • 【分类号】TN304.2
  • 【被引频次】1
  • 【下载频次】73
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