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Two-step Ni silicide process and influence of protective N2 gas

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【作者】 尚海平徐秋霞

【Author】 Shang Haiping and Xu Qiuxia(Institute of Microelectronics,Chinese Academy of Sciences,Beijing 100029,China)

【机构】 Institute of Microelectronics,Chinese Academy of Sciences

【摘要】 A two-step process of Ni silicide formed on bulk silicon,and the effects of different process conditions,including two-step RTA temperature and time,selective etching,and process protective nitrogen gas on the properties of the Ni silicide film have been studied.In particular,the experiments show that the quality of NiSi film is very sensitive to the process conditions of the first RTA.The experiments also show that the quality of the film is very sensitive to the flow of protective nitrogen gas.The corresponding mechanisms are discussed.

【Abstract】 A two-step process of Ni silicide formed on bulk silicon,and the effects of different process conditions,including two-step RTA temperature and time,selective etching,and process protective nitrogen gas on the properties of the Ni silicide film have been studied.In particular,the experiments show that the quality of NiSi film is very sensitive to the process conditions of the first RTA.The experiments also show that the quality of the film is very sensitive to the flow of protective nitrogen gas.The corresponding mechanisms are discussed.

【关键词】 NiSisilicideNi-silicide
【Key words】 NiSisilicideNi-silicide
  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2009年09期
  • 【分类号】TN304
  • 【被引频次】1
  • 【下载频次】36
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