High-performance electroabsorption modulator

【摘要】 A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing,using only a twostep low-pressure metal-organic vapor phase epitaxial process.An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties.In the experiment high modulation speed and high extinction ratio are obtained simultaneously,the electrical-to-optical frequency response (E/O response) without any load termination reaches to 22 GHz,and extinction ration is as high as 16 dB.更多还原

【Abstract】 A 100-μm-long electroabsorption modulator monolithically integrated with passive waveguides at the input and output ports is fabricated through ion implantation induced quantum well intermixing,using only a twostep low-pressure metal-organic vapor phase epitaxial process.An InGaAsP/InGaAsP intra-step quantum well is introduced to the active region to improve the modulation properties.In the experiment high modulation speed and high extinction ratio are obtained simultaneously,the electrical-to-optical frequency response (E/O response) without any load termination reaches to 22 GHz,and extinction ration is as high as 16 dB.更多还原