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Ag surface plasmon enhanced double-layer antireflection coatings for GaAs solar cells

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【作者】 王彦硕陈诺夫张兴旺杨晓丽白一鸣崔敏汪宇陈晓锋黄添懋

【Author】 Wang Yanshuo1, Chen Nuofu1, 2, Zhang Xingwang1, Yang Xiaoli1, Bai Yiming1, Cui Min1, Wang Yu()1, Chen Xiaofeng1, and Huang Tianmao1(1 Key Laboratory of Semiconductor Materials Science, Institute of Semiconductors, Chinese Academy of Sciences, Beijing 100083, China)(2 National Laboratory of Micro-Gravity, Institute of Mechanics, Chinese Academy of Sciences, Beijing 100080, China)

【机构】 Key Laboratory of Semiconductor Materials Science Institute of Semiconductors, Chinese Academy of SciencesNational Laboratory of Micro-Gravity, Institute of Mechanics, Chinese Academy of Sciences

【摘要】 Surface plasmon enhanced antireflection coatings for GaAs solar cells have been designed theoretically.The reflectance of double-layer antireflection coatings(ARCs) with different suspensions of Ag particles is calcu-lated as a function of the wavelength according to the optical interference matrix and the Mie theory.The mean dielectric concept was adopted in the simulations.A significant reduction of reflectance in the spectral region from 300 to 400 nm was found to be beneficial for the design of ARCs.A new SiO2/Ag-ZnS double-layer coating with better antireflection ability can be achieved if the particle volume fraction in ZnS is 1%-2%.

【Abstract】 Surface plasmon enhanced antireflection coatings for GaAs solar cells have been designed theoretically.The reflectance of double-layer antireflection coatings(ARCs) with different suspensions of Ag particles is calcu-lated as a function of the wavelength according to the optical interference matrix and the Mie theory.The mean dielectric concept was adopted in the simulations.A significant reduction of reflectance in the spectral region from 300 to 400 nm was found to be beneficial for the design of ARCs.A new SiO2/Ag-ZnS double-layer coating with better antireflection ability can be achieved if the particle volume fraction in ZnS is 1%-2%.

  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2009年07期
  • 【分类号】TM914.4
  • 【被引频次】7
  • 【下载频次】136
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