节点文献

Temperature:a critical parameter affecting the optical properties of porous silicon

  • 推荐 CAJ下载
  • PDF下载
  • 不支持迅雷等下载工具,请取消加速工具后下载。

【作者】 龙永福葛进丁训民侯晓远

【Author】 Long Yongfu1,Ge Jin2,Ding Xunmin2,and Hou Xiaoyuan2(1 Department of Physics and Electronics,Hunan University of Arts and Science,Changde 415000,China)(2 Surface Physics Laboratory(National Key Laboratory),Fudan University,Shanghai 200433,China)

【机构】 Department of Physics and Electronics, Hunan University of Arts and ScienceSurface Physics Laboratory (National Key Laboratory), Fudan University

【摘要】 The optical properties of porous silicon(PS) samples fabricated by pulse etching in a temperature range from-40 to 50-C have been investigated using reflectance spectroscopy,photoluminescence spectroscopy,and scanning electron microscopy(SEM).The dependence of the optical parameters,such as the refractive index n and the optical thickness(nd) of PS samples,on the etching temperature has been analyzed in detail.As the etching temperature decreases,n decreases,indicating a higher porosity,and the physical thickness of PS samples also de-creases.Meanwhile,the reflectance spectra exhibit a more intense interference band and the interfaces are smoother.In addition,the intensity of the PL emission spectra is dramatically increased.

【Abstract】 The optical properties of porous silicon(PS) samples fabricated by pulse etching in a temperature range from-40 to 50-C have been investigated using reflectance spectroscopy,photoluminescence spectroscopy,and scanning electron microscopy(SEM).The dependence of the optical parameters,such as the refractive index n and the optical thickness(nd) of PS samples,on the etching temperature has been analyzed in detail.As the etching temperature decreases,n decreases,indicating a higher porosity,and the physical thickness of PS samples also de-creases.Meanwhile,the reflectance spectra exhibit a more intense interference band and the interfaces are smoother.In addition,the intensity of the PL emission spectra is dramatically increased.

【基金】 supported by the National Natural Science Foundation of China and the Hunan Provincial Natural Science Foundation of China(No. 04JJ40031)
  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2009年06期
  • 【分类号】TN304.12
  • 【被引频次】3
  • 【下载频次】40
节点文献中: 

本文链接的文献网络图示:

本文的引文网络