节点文献
An approach to the optical interconnect made in standard CMOS process
【摘要】 A standard CMOS optical interconnect is proposed,including an octagonal-annular emitter,a field oxide,metal 1-PSG/BPSG-metal 2 dual waveguide,and an ultra high-sensitivity optical receiver integrated with a fingered P+/N-well/P-sub dual photodiode detector.The optical interconnect is implemented in a Chartered 3.3-V 0.35-μm standard analog CMOS process with two schemes for the research of the substrate noise coupling effect on the optical interconnect performance:with or without a GND-guardring around the emitter.The experiment results show that the optical interconnect can work at 100kHz,and it is feasible to implement optical interconnects in standard CMOS processes.
【Abstract】 A standard CMOS optical interconnect is proposed,including an octagonal-annular emitter,a field oxide,metal 1-PSG/BPSG-metal 2 dual waveguide,and an ultra high-sensitivity optical receiver integrated with a fingered P+/N-well/P-sub dual photodiode detector.The optical interconnect is implemented in a Chartered 3.3-V 0.35-μm standard analog CMOS process with two schemes for the research of the substrate noise coupling effect on the optical interconnect performance:with or without a GND-guardring around the emitter.The experiment results show that the optical interconnect can work at 100kHz,and it is feasible to implement optical interconnects in standard CMOS processes.
【Key words】 optical interconnect; standard CMOS; emitter; waveguide; ultra high-sensitivity;
- 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2009年05期
- 【分类号】TN432
- 【被引频次】3
- 【下载频次】76