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An ultra-low-power CMOS temperature sensor for RFID applications

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【作者】 徐琮辉; 高佩君; 车文毅; 谈熙; 闫娜; 闵昊;

【Author】 Xu Conghui, Gao Peijun, Che Wenyi, Tan Xi, Yan Na, and Min Hao (State Key Laboratory of ASIC & System, Fudan University, Shanghai 201203, China)

【机构】 State Key Laboratory of ASIC & System, Fudan University;

【摘要】 An ultra-low-power CMOS temperature sensor with analog-to-digital readout circuitry for RFID appli- cations was implemented in a 0.18-μm CMOS process. To achieve ultra-low power consumption, an error model is proposed and the corresponding novel temperature sensor front-end with a new double-measure method is presented. Analog-to-digital conversion is accomplished by a sigma-delta converter. The complete system consumes only 26 μA @ 1.8 V for continuous operation and achieves an accuracy of ±0.65 °C from –20 to 120 °C after calibration at one temperature.

【Abstract】 An ultra-low-power CMOS temperature sensor with analog-to-digital readout circuitry for RFID appli- cations was implemented in a 0.18-μm CMOS process. To achieve ultra-low power consumption, an error model is proposed and the corresponding novel temperature sensor front-end with a new double-measure method is presented. Analog-to-digital conversion is accomplished by a sigma-delta converter. The complete system consumes only 26 μA @ 1.8 V for continuous operation and achieves an accuracy of ±0.65 °C from –20 to 120 °C after calibration at one temperature.

  • 【文献出处】 半导体学报 ,Journal of Semiconductors , 编辑部邮箱 ,2009年04期
  • 【分类号】TP391.44;TP212.11
  • 【被引频次】14
  • 【下载频次】313
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