Design and analysis of a UWB low-noise amplifier in the 0.18μm CMOS process

【摘要】 An ultra-wideband (3.1-10.6 GHz) low-noise amplifier using the 0.18 μm CMOS process is presented. It employs a wideband filter for impedance matching. The current-reused technique is adopted to lower the power consumption. The noise contributions of the second-order and third-order Chebyshev filers for input matching are analyzed and compared in detail. The measured power gain is 12.4-14.5 dB within the bandwidth. NF ranged from 4.2 to 5.4 dB in 3.1-10.6 GHz. Good input matching is achieved over the entire bandwidth. The test chip consumes 9 mW (without output buffer for measurement) with a 1.8 V power supply and occupies 0.88 mm2.更多还原

【Abstract】 An ultra-wideband (3.1–10.6 GHz) low-noise amplifier using the 0.18 μm CMOS process is presented. It employs a wideband filter for impedance matching. The current-reused technique is adopted to lower the power consumption. The noise contributions of the second-order and third-order Chebyshev filers for input matching are analyzed and compared in detail. The measured power gain is 12.4–14.5 dB within the bandwidth. NF ranged from 4.2 to 5.4 dB in 3.1–10.6 GHz. Good input matching is achieved over the entire bandwidth. The test chip consumes 9 mW (without output buffer for measurement) with a 1.8 V power supply and occupies 0.88 mm2.更多还原