【摘要】 介绍了一种宽带开关耦合器芯片的研制。在GaAs pHEMT工艺平台上将宽带单刀双掷开关和兰格耦合器集成在一个芯片上,在实现二路功率分配功能的同时,还提供了在两个输出端口之间±90°相位切换的功能。该芯片频率范围覆盖6~18GHz,在整个频带内插入损耗<3.7dB,相位误差<14°,输入输出驻波比<1.8∶1。芯片尺寸1.5mm×3.0mm×0.1mm。详细描述了电路的设计流程,并提供最终的测试结果。该芯片具有频带宽、体积小、使用方便等特点,可应用于不同的微波系统。更多还原

【Abstract】 The design of a wide band GaAs MMIC switch coupler was introduced.A single pole double throw(SPDT) switch and a Lange coupler were integrated on a chip by GaAs pHEMT technology.The allocation function of power 2-spliter was realized and the ±90° phase shifts between the two output ports were also supplied.The frequency covers 6-18 GHz bandwidth.The insertion loss is less than 3.7 dB,the output ports phase error is less than 14°,and VSWR is less than 1.8∶1.The chip size is 1.5 mm×3.0 mm×0.1 mm.The design procedure of the circuit was described,and the test results were given.The chip is of wide band,small size and easy to use,and can be applied in different microwave systems.更多还原