【摘要】 介绍了长波双色AlxGa1-xAs/GaAs多量子阱红外探测器单元的设计、制作和测试。器件光敏面面积为300μm×300μm,光吸收峰值波长分别为10.8、11.6μm;采用垂直入射光耦合的工作模式,65K温度2V偏压下,两个多量子阱区的暗电流分别为4.23×10-6、4.19×10-6A;黑体探测率分别为1.5×109、6.7×109cm.Hz1/2/W;响应率分别为0.063、0.282A/W。GaAs基量子阱红外探测器(QWIP)材料生长和加工工艺成熟、大面积均匀性好、成本低、不同波段之间的光学串音小,使得AlGaAs/GaAsQWIP在制作多色大面阵方面具有明显的优势。更多还原

【Abstract】 The design,processing and measurement for a long wavelength two-color AlxGa1-xAs/GaAs quantum well infrared photo-detector were described.The unit structure of the photo-detector is 300 μm×300 μm.The peaks of the responsivity spectra are 10.8 μm and 11.6 μm.Using the vertical incident light,the measured dark currents of the two multi-quantum-well zones are 4.23×10-6,4.19×10-6A with a bias voltage of 2 V at 65 K,respectively.The blackbody detectivities are 1.5×109,6.7×109 cm·Hz1/2/W and the responsivities are 0.063,0.282 A/W,respectively.The AlGaAs/GaAs quantum well infrared photo-detector(QWIP)has obvious advantages in developing a large format and multiple color focal plane array due to the mature GaAs material growth and process technology,good uniformity,low cost and small optics crosstalk between the different wave bands.更多还原