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室温红外探测用非晶Ti薄膜的制备及表征

Preparation and Characterization of Amorphous Ti Films for Uncooled Infrared Detectors

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【作者】 刘爽陈煦杨亚培熊平刘俊刚

【Author】 LIU Shuang1, CHEN Xu1,YANG Ya-pei1,XIONG Ping2,LIU Jun-gang2(1. School of Optoelectronic Information,University of Electronic Science and Technology of China,Chengdu 610054,CHN;2. Chongqing Optoelectronics Research Institute,Chongqing 400060,CHN)

【机构】 电子科技大学光电信息学院重庆光电技术研究所

【摘要】 采用快速蒸发并冷却衬底的方法,在不同衬底结构上制备出了电阻温度系数(TCR)优于0.25%的红外探测用非晶Ti薄膜。通过表征分析了氧对薄膜电阻影响,以及组分对其性能的影响。研究表明,Ti薄膜有较强吸附氧能力,低价态的Ti利于红外探测。提出采用保护层和非氧硅化物牺牲层以提高薄膜探测能力。

【Abstract】 Amorphous Ti films for uncooled infrared detectors with the TCR overmatch of 0.25% were successfully prepared on different structural substrates by the method of quickly evaporating and cooling the substrates. The effects of oxygen on the resistance of films and that of components on performance are characterized. The experimental results show that Ti with lower valence is better for uncooled infrared detectors. It is proposed that the protecting layer and the sacrificial layer with non-oxidative silicide can be applied to improve the detectivity.

【基金】 电子科技大学青年基金资助课题
  • 【文献出处】 半导体光电 ,Semiconductor Optoelectronics , 编辑部邮箱 ,2009年05期
  • 【分类号】TN215
  • 【下载频次】147
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