【摘要】 在SOI脊形波导上通过光刻的方法制作了高阶布拉格光栅。采用顶层Si厚为2μm的SOI基片,通过半导体芯片制备中的光刻工艺,在脊高为935 nm,波导宽度为2μm的脊形波导上,分别制作了刻蚀深度为565 nm和935 nm的起伏型高阶布拉格光栅,测试表明,在1 540~1 640 nm波长范围内,得到了大于10 dB的消光比,实现了高阶布拉格光栅在SOI脊形波导上的滤波效果。理论和实验都证明了光栅刻蚀深度的增大将有利于增加高阶布拉格光栅的耦合系数,以及光栅周期数的增加会引起更大的光栅损耗。更多还原

【Abstract】 A corrugated high-order Bragg grating was fabricated on a silicon-on-insulator(SOI) ridge waveguide,with the width of 2 μm and the ridge height of 935 nm,by photolithography.The core thickness of the SOI wafers is 2 μm.The etching depth of the grating is 565 nm and 935 nm,respectively.The extinction ratio of the device is above 10 dB in the wavelength range 1 540～1 640 nm,demonstrating the filterability of high-order Bragg grating on SOI ridge waveguides.Experimentally and theoretically,the coupling coefficient of high-order Bragg grating was proved to increase with the etching depth and a higher grating loss would be coused by the increase of the periodicity of grating.更多还原