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自组装制备硅纳米线阵列及其光致发光特性研究
Self-assembled Growth and Optical Emission of Silicon Nanowires Array
【摘要】 用微电化学催化腐蚀法制备了硅纳米线阵列,通过扫描电镜(SEM)观察了样品的表面形貌。用荧光光谱仪测量了有序硅纳米线阵列的光致发光特性,发现当激发波长增加时,有序硅纳米线阵列的光致发光峰位单调红移,发光强度也单调增强。对比多孔硅的发光机理和现有实验条件,对有序硅纳米线阵列可能的发光机理进行了讨论。
【Abstract】 Silicon nano-wire arrays(SiNW) were prepared by a novel metal-catalyzed chemical etching technique.Morphologies of the samples were studied by Scanning Electron Microscope(SEM).The photoluminescence(PL) of ordered-SiNW was investigated.It was found when the excitation wavelength increased,the PL of ordered-SiNW red shifts and the intensity of PL increases monotonously.Compared with the emission mechanism of porous silicon(PS) and our experimental conditions,a possible emission mechanism of ordered-SiNW is discussed.
【关键词】 微电化学氧化还原反应；
硅纳米线阵列；
多孔硅；
光致发光光谱；
扫描电镜；
发光机理；
【Key words】 microscopic electrochemical redox reaction； silicon nano-wire arrays； pPorous cilicon； photoluminescence spectra； scanning electron microscope； emission mechanism；
【Key words】 microscopic electrochemical redox reaction； silicon nano-wire arrays； pPorous cilicon； photoluminescence spectra； scanning electron microscope； emission mechanism；
【基金】 四川省科技厅重点研究项目(2006Z08-001-2)
- 【文献出处】 半导体光电 ,Semiconductor Optoelectronics , 编辑部邮箱 ,2009年02期
- 【分类号】TB383.1
- 【被引频次】13
- 【下载频次】566