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热丝CVD制备微晶硅薄膜的研究

Study on the properties of microcrystalline silicon films prepared by HWCVD

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【作者】 吕博嘉刘艳红刘东平刘爱民刘韶华马腾才

【Author】 LU Bo-jia1,LIU Yan-hong1,LIU Dong-ping2,LIU Ai-min1,LIU Shao-hua1,MA Teng-cai1(1.State Key Laboratory for Materials Modification by Laser,Ion and Electron Beams,Dalian University of Technology,Dalian 116024,China;2.School of Science,Dalian Nationalities University,Dalian 116600,China)

【机构】 大连理工大学三束材料改性国家重点实验室大连民族学院理学院大连理工大学三束材料改性国家重点实验室 辽宁大连116024辽宁大连116024辽宁大连116600

【摘要】 采用热丝化学气相沉积技术制备微晶硅薄膜,利用X射线衍射谱、Raman散射谱、透射光谱和扫描电子显微镜等检测手段,系统地研究沉积过程中沉积气压对微晶硅薄膜晶粒尺寸、晶态比和光学带隙的影响,运用Tacu法则对薄膜的透射率和厚度进行计算分析,得到薄膜光学带隙与沉积气压之间的关系,结果表明薄膜的光学带隙随着沉积气压的升高而单调下降。

【Abstract】 Microcrystalline silicon thin films were deposited by HWCVD(hot-wire chemical vapor deposition) of which the structural and morphological properties were characterized by X-Ray Diffraction,Raman Spectrum,Transmittance Spectroscopy and Scanning Electron Microscope.The effects of gas pressure in HWCVD process on the grain size,crystalline ratio and optical band gap of the microcrystalline silicon films deposited under different conditions were studied systematically.The transmittances and thickness of thin films were calculated with Tacu law,and the results indicated that the values of optical band gap decrease with increasing gas pressure in HWCVD process.

【基金】 国家自然科学基金资助项目,项目号10405005
  • 【分类号】TN304.055
  • 【被引频次】5
  • 【下载频次】347
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