【摘要】 本文采用中频孪生非平衡磁控溅射设备制备非晶ZnO薄膜,再以不同剂量的铝离子注入法制备氧化锌铝薄膜。并采用X射线、扫描电镜、四极电阻仪、霍尔效应等方法测量和分析了原始沉积的和铝金属离子注入掺杂ZAO膜在不同温度下退火的组织结构、形貌、电阻与工艺的关系。结果表明,金属离子注入铝的方法制备氧化锌铝薄膜的电阻值随着注入剂量的增加而减小,呈线形关系,透明度均在90%左右,在铝离子注入剂量大于1×1016时,透光率在75%～80%。研究表明,该方法可以任意调整铝离子的注入剂量,获得要求特性的ZAO薄膜。更多还原

【Abstract】 Amorphous ZnO thin films were prepared by MF unbalanced dual magetron sputtering process,then the Al ion implantation was done into the films with different doses to prepare Al-doped ZnO(ZOA) thin films as semi-conductor photoelectron material.The relationships between the microstructure,morphology and risistivity of both the films in which the ZOA films were annealed at different temperatures and their preparing processes were measured and discussed by XRD,SEM,quadrupole resistivity meter and Hall effect.The results showed that the resistivity of ZOA films increases linearly with the decreasing dose for Al ion implantation.The transmittance of ZOA films is all about 90%,but it will become 75%～80% if the dose is over 1×1016 ion/cm2.更多还原