节点文献
In situ photoemission study of interface and film formation during epitaxial growth of Er2O3 film on Si(001) substrate
【摘要】 <正>Synchrotron radiation photoemission spectroscopy was used to study the formation process of Er2O3/Si(001) interface and film during epitaxial growth on Si. A shift in the O core-level binding energy was found accompanied by a shift in the Er2O3 valence band maxi-mum. This shift depended on the oxide layer thickness and interfacial structure. An interfacial layer was observed at the initial growth of Er2O3 film on Si, which was supposed to be attributed to the effect of Er atom catalytic oxidation effect.
【Abstract】 Synchrotron radiation photoemission spectroscopy was used to study the formation process of Er2O3/Si(001) interface and film during epitaxial growth on Si. A shift in the O core-level binding energy was found accompanied by a shift in the Er2O3 valence band maxi-mum. This shift depended on the oxide layer thickness and interfacial structure. An interfacial layer was observed at the initial growth of Er2O3 film on Si, which was supposed to be attributed to the effect of Er atom catalytic oxidation effect.
【Key words】 high-κ oxides; surface and interface chemistry; rare earths;
- 【文献出处】 Journal of Rare Earths ,稀土学报(英文版) , 编辑部邮箱 ,2008年06期
- 【分类号】TB304
- 【被引频次】3
- 【下载频次】36