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一维热传导型半导体器件的有限体积元逼近及分析
Finite Volume Element Approximation and Analysis for One-Dimensional Semiconductor Device Simulation
【摘要】 采用有限体积元方法来解决一维热传导型半导体器件数值模型,将分段线性函数和分段常数函数分别作为有限体积元方法的试探函数和检验函数,构造了半导体器件模型的全离散有限体积元逼近格式和计算程序.并进行理论分析,得到了最优阶H1-模误差估计.
【Abstract】 A finite volume element approximation is derived and studied for one-dimensional semiconductor device simulation. The main purpose is to develop a general framework for finite volume element approximation of the semiconductor problems and to study the error analysis. The finite volume element method is considered under a piecewise linear trial function space and a piecewise constant test function space. An optimal error estimate in the H1-norm is giren.
【关键词】 半导体器件;
有限体积元方法;
误差估计;
【Key words】 semiconductor device; finite volume element method; error estimate;
【Key words】 semiconductor device; finite volume element method; error estimate;
【基金】 国家自然科学基金资助项目(SX06N2)
- 【文献出处】 烟台大学学报(自然科学与工程版) ,Journal of Yantai University(Natural Science and Engineering Edition) , 编辑部邮箱 ,2008年04期
- 【分类号】O241.82
- 【下载频次】78