【摘要】 介绍了一种锆钛酸铅镧(PLZT)基铟锡氧化物(ITO)薄膜的湿法刻蚀法。用V(HCl)∶V(HNO3)∶V(H2O)=50∶3∶50的混合溶液对ITO进行不同温度的刻蚀试验。通过扫描电子显微镜(SEM)和X-射线能谱仪(EDS)分析表明,在35℃经30 nm/min刻蚀能得到图形边缘质量良好和表面无残留物的ITO图形;在同等条件下刻蚀的PLZT薄膜,刻蚀速率不及ITO的2%,表明该刻蚀方法具有良好的选择性。更多还原

【Abstract】 In this paper,a novel wet-etching process of ITO thin films based on PLZT was reported.ITO etched experiments at various temperatures were carried out in mixed solution of V(HCl)∶ V(HNO3)∶ V(H 2O)=50∶3∶50.The suitable etch rate was 30 nm/min at 35 ℃,the ITO pattern had good edge quality and without residues on the surface by SEM and EDS analyzing.PLZT thin films was etched at the same condition,the etch rate was inferior to 2% of ITO’s,the wet-etching process showed good selectivity over PLZT thin films.更多还原