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BaBSi玻璃对ZnVSb基压敏电阻结构与性能的影响
The Effects of Doping Ba-B-Si Frits on the Microstructure and Properties of Zn-V-Sb Based Varistor
【摘要】 通过传统工艺制备出Ba-B-Si玻璃相掺杂的Zn-V-Sb基压敏电阻材料,研究了其微观结构及性能。结果表明,Ba-B-Si玻璃相的掺杂能降低Zn-V-Sb基压敏电阻试样的烧结温度,玻璃相中B2O3的含量过多,会使ZnO压敏电阻材料的伏安(V-I)特性变差;而Ba2+含量的增加,使ZnO压敏电阻材料的非线性系数上升。
【Abstract】 Zn-V-Sb based varistor ceramics doped with Ba-B-Si frits were prepared and the microstructure and properties were investigated.The results revealed that the sintering temperatures of Zn-V-Sb based ceramics would decline with doping Ba-B-Si frits.The V-I properties of samples got worse with extra B2O3,while nonlinearity exponent of Zn-V-Sb ceramics rised with ascension of BaO.
【关键词】 Ba-B-Si玻璃相;
压敏电阻;
烧结温度;
掺杂;
【Key words】 Ba-B-Si frits; varistor; sintering temperature; doping;
【Key words】 Ba-B-Si frits; varistor; sintering temperature; doping;
【基金】 国家自然科学基金资助项目(60501015);陕西省自然科学基金资助项目(N6CS0001)
- 【文献出处】 压电与声光 ,Piezoelectrics & Acoustooptics , 编辑部邮箱 ,2008年01期
- 【分类号】TN37
- 【被引频次】3
- 【下载频次】97