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纳米MOS器件RTS噪声测量与分析
Measurement and analysis of RTS noise in nano-MOS devices
【摘要】 提出了一种基于虚拟仪器的纳米MOS器件随机电报信号噪声测量方法.应用虚拟仪器平台采集随机电报信号噪声的时间序列,采用逐点差分和高斯函数拟合方法,提取了随机电报信号噪声的相对幅度,再通过数字滤波和指数函数拟合方法提取随机电报信号噪声时常数.通过对90 nm MOS器件的测量分析,结果表明该方法不但计算速度远高于传统方法,而且在相同精度要求下,需要的采样点仅为传统方法的1/10.在随机电报信号时常数较小的情况下,测量精度为传统方法的几倍到几十倍.
【Abstract】 A virtual-instrument based measurement and analysis method for RTS noise in nano-MOS devices is presented.After a systematic computation of both difference analysis and Gaussian function fitting,and digital filtering and exponential function fitting,the relative amplitudes and time constants of RTS noise are obtained,respectively.Verified by experimental characterization of RTS noise in 90 nm MOSFETs,this new method not only manifests higher efficiency,but also needs just 1/10 sample points of the traditional method under the same requirements of measuring precision.
【Key words】 RTS noise; noise measurement; virtual-instrument; nano-MOS devices;
- 【文献出处】 西安电子科技大学学报 ,Journal of Xidian University , 编辑部邮箱 ,2008年06期
- 【分类号】TN386
- 【被引频次】6
- 【下载频次】217