【摘要】 采用0.5μm,N阱CMOS工艺设计一种高精度带隙基准电压源,基准电压为1.245 V,在0~70℃内温度系数仅为12.5 ppm/℃,工作电压为2.8~8 V,具有非常高的电源抑制比(PSRR),低频下高达107 dB。此电路为电流反馈型基准源,能够产生自偏置电流,使电路建立稳定工作点。其结构能有效减小运算放大器的失调电压对基准输出的影响。更多还原

【Abstract】 This paper describes the design of a high precision bandgap reference,implemented in 0.5 μm n-well CMOS technology.The circuit generates a reference voltage of 1.245 V and has a temperature coefficient of 12.5 ppm/℃ between 0 and 70 ℃.It can operate with supply voltages between 2.8 V and 8 V.It has a PSRR of 107 dB under low frequency.This circuit works in a current feedback mode,and it generates its own reference current,resulting in a stable operation.The architecture designed in this circuit can efficiently reduce the offset voltage of operation amplifier.更多还原