【摘要】 运用液相法生长成ZnO纳米线薄膜,并利用肖特基型异质结的发光原理,构造成功肖特基型ZnO纳米线二极管发光器件.在大于6V直流电压驱动下,观察到近紫外波段392nm处和可见光波段525nm的发射谱带.从单向导电特性及ZnO纳米线材料的能带结构等方面探讨了该种器件的电致发光机理.更多还原

【Abstract】 A Schottky type light-emitting diode of ZnO nanowire was fabricated based on the principle of luminescence of Schottky barrier heterojunction. Driven by a voltage of above 6 V, an EL spectrum was obtained. The spectrum consisted of two peaks: one is centered at a wavelength of the ultraviolet 392 nm, and the other at the visible 525 nm. The mechanism of electroluminescence of this device was analyzed according to the rectifying I-V curve and the energy band structure.更多还原