【摘要】 本文对NMOS ESD保护器件建模中的骤回现象和寄生效应进行了研究,并据此提出了一个NMOS ESD保护器件的DC模型。该模型包括基于BSIM3模型的MOS管、反映寄生效应的寄生NPN晶体管、衬底电阻和串联电阻。提出了用于描述模型工作在大电流区域时状态的I-V特性计算公式和对模型所需晶体管参数进行提取的方法。仿真结果表明该模型能够较好地描述NMOS ESD保护器件的工作特性。更多还原

【Abstract】 A practical DC model for simulation of ESD NMOS is presented. Models for MOS transistor based on BSIM 3V3, bipolar transistor for parasitic effect, substrate resistance and series resistance are provided. Studies have been done on the snapback and parasitic bipolar action for modeling ESD NMOS. Equations for modeling the high current behavior of NMOS transistor have been developed. Extraction methodology for obtaining the bipolar parameters is given. Simulation results are presented and compared to the experiment data.更多还原