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微波等离子体制备氮杂二氧化钨钒薄膜
V0.98W0.02O2-xNy thin films synthesized by microwave plasma
【摘要】 根据二氧化钒在68℃附近发生相变的这一特性,选用V2O5和W2O3为前驱物,通过在玻璃片上镀膜,采用微波等离子体增强法,合成了氮杂二氧化钨钒(V0.98W0.02O2-xNy)薄膜.通过XRD表征了样品的组成,用自制的仪器测量了合成样品的相变温度,结果表明:样品为氮杂二氧化钨钒(V0.98W0.02O2-xNy),通过氮掺杂能有效降低二氧化钨钒薄膜的相变温度,相变温度最低可以降至35℃.
【Abstract】 According to the character of VO2 which will take phase transition temperature under certain temperature near 68℃,V0.98W0.02O2-xNy thin films synthesized by microwave plasma enhanced route using V2O5 and W2O3 as molecular precursors through coating film in glass slice.The components of yielded samples are characterized by XRD,phase transition temperature of yielded samples are measured by home-made instrument.The results show that the samples were V0.98W0.02O2-xNy and phase transition temperature of V0.98W0.02O2-xNy thin films can fall in effect by nitrogen doping;the lowest phase transition temperature can fall to 35 ℃.
【Key words】 microwave plasma; nitrogen doped V0.98W0.02O2-xNy; phase transition temperature; thin film;
- 【文献出处】 武汉工程大学学报 ,Journal of Wuhan Institute of Technology , 编辑部邮箱 ,2008年01期
- 【分类号】TB383.2
- 【被引频次】3
- 【下载频次】170