【摘要】 采用熔融-缓冷工艺制备了Ga掺杂n型三元GaxPb1-xTe(x=0.01—0.05)化合物。研究了Ga含量对化合物热电传输性能的影响规律。结果表明,随着Ga含量的增加,样品载流子浓度增加,载流子迁移率逐渐减小,载流子散射机制从声学波散射逐渐变为声学波和电离杂质共同散射;随着Ga含量的增加,化合物的电导率大幅度增加,Seebeck系数逐渐降低。在所有组成化合物中,当x=0.02时,化合物功率因子最大,在375 K和775 K时分别为2.88×10-3W/mK2和1.73×10-3W/mK2。更多还原

【Abstract】 Ga dopping GaxPb1-xTe(x=0.01—0.05) compounds were prepared by melting reaction method,and the influence of Ga content on the thermoelectric properties were investigated.The results showed that temperature dopendent carrier concentration increased and the hall mobility decreased with increasing Ga content,which indicated that the carrier scattering mechanism gradually changed from an acoustical scattering to the interaction between an acoustical phone and an ionized impurity scattering as x increased.All samples show n-type conduct and the absolute Seebeck coefficient values and the electric conductivity increase significantly with increasing Ga content.更多还原