【摘要】 采用sol-gel工艺制备了Pt/SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂/p-Si异质结.研究了退火温度对异质结微观结构与生长行为、漏电流密度和C-V特性等的影响.研究表明:成膜温度较低时,SrBi₂Ta₂O₉、Bi₄Ti₃O₁₂均为多晶薄膜,但随退火温度升高,Bi₄Ti₃O₁₂薄膜沿c轴择优生长的趋势增强;经不同退火温度处理的Pt/SrBi₂Ta₂O₉/Bi-4Ti₃O₁₂/p-Si异质结的C-V曲线均呈现顺时针非对称回滞特性,且回滞窗口随退火温度升高而增大,经700℃退火处理后异质结的最大回滞窗口达0.78V;在550～700℃范围内,Pt/SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂/ p-Si异质结的漏电流密度先是随退火温度升高缓慢下降,当退火温度超过650℃后漏电流密度明显增大,经650℃退火处理的异质结的漏电流密度可达2.54×10_-7A/cm²的最低值.更多还原

【Abstract】 Pt/SrBi₂Ta₂O₉/Bi₄Ti3_O12/p-Si heterostructures were fabricated by sol-gel method.The effects of annealing temperature on microstructure,crystal growth behavior,leakage current density, and C-V characteristics of Pt/SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂/p-Si heterostructure were investigated.The SrBi2_Ta₂O₉/Bi₄Ti₃O₁₂ multilayer thin films annealed at low temperature are polycrystalline,and grow in the preferred c-axis orientation with the increase of annealing temperature.The C-V curves of Pt/SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂/p-Si heterostructure annealed at various temperatures all show a clockwise ferroelectric hysteresis loop.The widths of C-V hysteresis loops of Pt/SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂/p-Si heterostructure increase with the increase of annealing temperature and reach a maximum of 0.78V when the heterostructure is annealed at 700℃.The leakage current density of Pt/SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂/p-Si heterostructure decrease slowly with the increase of annealing temperature from 550℃to 650℃.How- ever,when the annealing temperature is above 650℃,the leakage current density of Pt/SrBi₂Ta₂O₉/ Bi₄Ti₃O₁₂/P-Si heterostructure increase evidently.The lowest leakage current density is 2.54×10^-7A/ cm² when Pt/SrBi₂Ta₂O₉/Bi₄Ti₃O₁₂/p-Si heterostructure is annealed at 650℃.更多还原