【摘要】 以Au作催化剂通过在空气中将金属锗加热到550~800℃,在单质锗表面原位大面积生长出了GeO2纳米线.采用扫描电镜和激光喇曼光谱对产物进行了表征分析.结果表明,GeO2纳米线为六方相结构,长度可达30μm.通过改变加热温度,纳米线的直径可在110~170 nm范围内调节.提出了可能的生长机理以说明GeO2纳米线的形成.并且在GeO2纳米线的喇曼光谱中观察到了声子限制效应.更多还原

【Abstract】 GeO2 nanowires could be in-situ grown on the surface of germanium substrates on a large scale by heating germanium wafers coated with an Au film at 550～800 ℃ in an air atmosphere.The synthesized products were characterized by scanning electron microscopy and Raman spectroscopy.The results showed that these GeO2 nanowires with a hexagonal structure had a controllable diameter in the range of 110～160 nm with 30 micrometers in lengths by varying temperature.A possible mechanism was proposed to account for the growth of GeO2 nanowires,and the effects of phonon confinement on the Raman spectrum of GeO2 nanowires was also observed.更多还原