【摘要】 对直流磁控溅射方法制备Fe-Si化合物的工艺过程进行了研究.首先通过改变溅射气压,溅射功率和Ar气流量,在Si(100)衬底上沉积约100 nm纯金属Fe膜,随后在真空退火炉中800℃长时间退火形成Fe-Si化合物.由X射线衍射(XRD)对所形成的Fe-Si化合物的物相和晶体结构进行分析,给出了一组最优化的溅射工艺参数:溅射Ar气压1.5 Pa,溅射功率100 W,溅射Ar气流量20 SCCM.更多还原

【Abstract】 The sputtering processes are studied for Fe-Si compounds prepared by magnetron sputtering.The pure metal Fe film of about 100 nm thickness is deposited firstly on Si(100) substrate by DC magnetron sputtering.With various Ar pressures,sputtering powers and Ar fluxes,and then subsequent annealing is performed in a vacuum furnace.The formation of Fe-Si compounds is clarified using X-ray diffraction(XRD).The analyses of crystal structures for the Fe-Si compounds show that the most optimal sputtering parameters are as follows:1.5 Pa for sputtering Ar pressure,100 W for sputtering power and 20 SCCM for sputtering Ar flux.更多还原