【摘要】 U型坩埚上升法是生长碘化铅单晶体的一种新方法,它不能自动排除熔体中可能产生的气泡。本文结合已有的实验数据,分析了熔体温度、熔体富碘量对气泡形核临界半径的影响。结果表明:随着熔体温度升高或熔体富碘量增加,气泡长大的临界半径减小。熔体温度低于773K时,气泡长大的临界半径在0.11μm以上,且晶锭中没有气泡。这为优化晶体生长工艺奠定了理论基础。更多还原

【Abstract】 There may be bubbles in melted lead iodide(PbI2),which cannot avoid the generation of bubbles when employing the ascending U type ampoule method for the growth of PbI2 single crystal.The calculation shows that the critical radius of bubble decreases with the increase of excess iodine in melted PbI2 and the rising of melting temperature.The critical radius of bubble is larger than 0.11 μm and no bubble generates in PbI2 ingot when the melting temperature is lower than 773K.So the crystal growth technology can be optimized according to the results obtained above.更多还原