【摘要】 采用扫描电镜(SEM)和电子背散射衍射(EBSD)技术,观察和分析了GaAs和GaN晶片热压键合的界面热应力和晶片键合质量。利用EBSD测量了GaAs-GaN键合界面的菊池花样质量、晶格转动、晶格错配和位错密度等应力敏感参数。结果表明,晶片键合质量良好,键合界面中心区域的热应力小于边缘区域的热应力。GaN层和GaAs层中的应力影响范围,在中心区域分别约为100 nm和300 nm,在边缘区域分别约为100 nm和500 nm。EBSD显示的应力分布图与模拟应力场相似。模拟和计算表明,最大剥离应力和剪切应力分布在键合界面的边缘。剥离应力是导致晶片解键合的主要原因。更多还原

【Abstract】 The interfacial thermal stress and the bonding quality of GaAs-GaN wafers via thermal pressures were observed and analyzed by a scanning electron microscope(SEM) with an electron backscatter diffraction(EBSD) technology.Stress sensitive parameters,including image qualities of Kikuchi patterns,crystal rotations,lattice misorientations and dislocation intensities at GaAs-GaN bonding interface was measured by EBSD.The results indicate that the wafer bonding was of high quality and the thermal stress of bonding interface in the centre area was smaller than that in the edge areas.The influence regions of the stress for GaN and GaAs layers were about 100 and 300 nm in the centre area and 100 and 500 nm in the edge area.Stress field displayed by EBSD was similar to that by simulation.The simulation and calculation indicate that the largest shearing and peeling stresses distributed in the edge area of bonding interface.The peeling stress played an important role for wafer de-bonding.更多还原