【摘要】 采用等离子体增强化学气相沉积(PECVD)技术,在玻璃衬底上低温沉积了优质本征纳晶硅(nc-Si:H)薄膜和掺磷纳晶硅(nc-Si(P):H)薄膜。通过拉曼散射谱和XRD衍射谱分别研究了PH3浓度对nc-Si(P):H薄膜的晶化率(Xc)和晶格微观畸变(Ls)的影响,结果显示随着PH3浓度的增加,Xc和Ls均呈现了先增加后减小的相似趋势,暗示二者之间存在紧密的关联;利用四探针法测量了nc-Si(P):H薄膜的电导率(σ),结果表明,nc-Si(P):H薄膜的σ比nc-Si:H薄膜提高了约5个数量级,且随着PH3浓度的增大而单调增大。该变化可以从Xc、Ls的角度得到合理解释。更多还原

【Abstract】 Intrinsic and phosphorus-doped nc-Si:H films were deposited on glass substrate at low temperature by PECVD technique.And the dependence of PH3 concentration on its crystalline volume fraction(Xc)and lattice strain(Ls) were investigated by Raman and XRD spectroscopy respectively.It is demonstrated that Xc and Ls have a similar change trend with PH3 concentration,which implies a close relationship between them.The measured electrical conductivity(σ) of nc-Si(P): H films shows an increase by five order than that of nc-Si: H films and a monotonous increase with PH3 concentration.This change can be reasonably explained from Xc and Ls.更多还原