【摘要】 等离子增强化学气相沉积(PECVD)SiC谐振器的制作面临导电和应力及应力梯度控制问题.为了解决导电问题,采用金属W作为导电材料,它耐HF腐蚀,可简化工艺.使W薄膜应力最小的溅射条件为:Ar压力2.0 Pa,功率300 W,反溅射工艺;为了解决应力梯度问题,采用双层金属结构、退火和离子注入3种手段.在离子注入电压120 keV、剂量1.6×1016cm-2、不退火的条件下,可以得到应力梯度最小、结构完好的PECVD SiC谐振器.更多还原

【Abstract】 Electric conduction,stress and stress gradient control are two key points in fabricating plasma enhanced chemical vapor deposition(PECVD) silicon carbide resonators.Metal tungsten was chosen to solve the first problem with corrosion prevention property in hydrofluoric acid,which can simplify technology process.The match sputtering condition of minimizing the stress of tungsten film was as follow: Argon pressure is 2.0 Pa,power is 300 W,and back sputtering.Annealing,ion-implantation and sputtering two layers of metal films were introduced to release stress gradient in multi-layers.The results show that no annealing,120 keV ion-implantation voltage,1.6×1016 cm-2 dosage are the best technological conditions to fabricate silicon carbide resonators.更多还原