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PLD方法在CVD金刚石膜上生长ZnO薄膜及其特性研究
Growth and properties of ZnO film on CVD diamond film by pulsed laser deposition
【摘要】 采用脉冲激光沉积(PLD)技术,在(110)和(100)织构金刚石膜上成功制备出高度c-轴取向的ZnO薄膜,然后在纯氮气氛条件下对ZnO薄膜进行退火处理.作为比较。也在(100)Si上生长的ZnO薄膜进行了相同的处理.通过测量X射线衍射(XRD)谱和光致发光(PL)谱,研究了不同衬底性质和退火对薄膜结构和发光特性的影响.实验结果表明,在(100)织构金刚石上的ZnO膜具有最好的结晶质量,其半高宽只有0.2°.退火之后近紫外发光峰明显减弱的同时,绿色发光峰得到增强.这里归结为氮气退火后氧空位的增加,这点从退火后的XPS谱中可以得到进一步的确认.
【Abstract】 ZnO films were successfully deposited on the(110),(100)-textured diamond films by pulsed laser deposition(PLD)method.Annealing treatments for as-deposited samples were also performed in nitrogen ambient.The effect of different substrates and annealing atmosphere on the structural and optical properties of the deposited films was investigated by means of X-ray diffraction(XRD)and photoluminescence(PL) measurements.The best crystal quality of ZnO film was obtained on the(100)orientation diamond film. After annealing in nitrogen ambient,the intensity of ultraviolet(UV)emission decreases greatly and the deep-level emission is enhanced.It is contributed to the introduction of a great deal of oxygen vacancies into ZnO films during the annealing process,which can be further confirmed by X-ray photoelectronic spectroscopy(XPS).
【Key words】 materials; ZnO films; pulsed laser depostion; diamond; strain;
- 【文献出处】 量子电子学报 ,Chinese Journal of Quantum Electronics , 编辑部邮箱 ,2008年02期
- 【分类号】TN304
- 【被引频次】1
- 【下载频次】205