【摘要】 在高电阻率的N型硅衬底上制作出全耗尽背照式的光电二极管。电阻率约为15000Ω.cm的硅衬底可以得到几百微米深的耗尽区,而通过在光电二极管的正背面施加一定的偏压就可以使其工作在全耗尽背照式的模式下。背面的浅结可以得到比较好的短波响应,而相对大的耗尽宽度可以在近红外处得到比较好的响应。测试结果表明器件在偏压为30V时,1μm处的峰值响应达到0.72A/W,量子效率达90%。更多还原

【Abstract】 Fully depleted back illuminated silicon photodiode array has been fabricated on high-resistivity,n-type silicon.The resistivity on the order of 15 000 Ω·cm,allows for depletion depths of several hundred microns.Fully-depleted,back-illuminated operation is achieved by the application of a bias voltage to photodiode.The shallow junction in back side allows for good short wavelength response,while the relatively large depleted thickness results in good near-infrared response.The measured results show that the peak responsivity is 0.72 A/W at 1 μm with quantum efficiency 90% under a bias voltage of 30 V.更多还原