A study of radiation effects of 9 and 12 MeV protons on Chinese CMOS image sensor degradation

【摘要】 <正>The 9 and 12 MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1×10⁹ to 4×10¹0 cm^-2and l×10⁹ to 2×10¹2 cm^-2have been carried out respectively.The color pictures and dark output images are captured,and the average brightness of dark output images is calculated.The anti-irradiation fluence thresholds for 9 and 12 MeV protons are about 4×10¹0 and 2×10¹2 cm^-2,respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.更多还原

【Abstract】 The 9 and 12 MeV proton irradiations of the Chinese CMOS Image Sensor in the fluence range from 1×10⁹ to 4×10¹0 cm^-2and l×10⁹ to 2×10¹2 cm^-2have been carried out respectively.The color pictures and dark output images are captured,and the average brightness of dark output images is calculated.The anti-irradiation fluence thresholds for 9 and 12 MeV protons are about 4×10¹0 and 2×10¹2 cm^-2,respectively. These can be explained by the change of the concentrations of irradiation-induced electron-hole pairs and vacancies in the various layers of CMOS image sensor calculated by the TRIM simulation program.更多还原