【摘要】 以单晶Si（111）为基底,采用双槽法电结晶制备了Co/Pd纳米多层膜,使用电化学石英晶体微天平（EQCM）精确测定沉积过程中Co和Pd膜的质量随沉积时间的变化.通过电位阶跃法探讨了沉积层晶体成核机理,得到Co和Pd电结晶初期均为三维瞬时成核过程.X射线衍射（XRD）研究表明,Co和Pd的结晶与生长显示择优取向,出现了111_Co-Pd的合金峰.并用物性测量系统（PPMS）测试了Co/Pd多层膜的磁性能,所得磁滞回线表明:矫顽力随着多层膜磁性层厚度的减小而增大,可达到9.0×10⁴ A/m.更多还原

【Abstract】 Co/Pd nano-multilayers films were prepared on（111）plane of single crystal silicon by double-bath method.The mass change of Co and Pd layers were exactly measured by electro- chemical quartz crystal microbalance（EQCM）.The mechanism of the growth kinetics for Co and Pd was proved to be 3D instantaneous nucleation at the early stage by potential step method.The pre- ferred orientation of（111）_Co-Pdduring the multilayers’electrodeposition and growth was observed by XRD.In addition,magnetic hysteresis loops were measured by physical property measurement system （PPMS）at room temperature and it was shown that coercive force was increased with the decrease of Co thickness,its maximum value reached 9.0×10⁴ A/m.更多还原