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Oxygen pressure dependent electro-resistance in La0.9Sr0.1MnO3 thin films grown by laser molecular beam epitaxy

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【Author】 OUYANG SiHua1,2,WANG ChunChang2,LIU GuoZhen2,HE Meng2, JIN KuiJuan2,DANG ZhiMin1 & L HuiBin21 College of Materials Science and Engineering,Beijing University of Chemical Technology,Beijing 100029,China; 2 Beijing National Laboratory for Condensed Matter Physics,Institute of Physics,Chinese Academy of Sciences,Beijing 100080,China

【摘要】 We report here studies on the influence of oxygen pressure on the electroresis-tance behavior of La0.9Sr0.1MnO3 thin films fabricated by laser molecular beam epi-taxy. It was found that the film deposited at lower oxygen pressure shows larger c-axis parameter,higher resistance,and more distinct electroresistance. These results reveal that the electroresistance of manganite thin films can be tuned by the conditions of film fabrication.

【Abstract】 We report here studies on the influence of oxygen pressure on the electroresis-tance behavior of La0.9Sr0.1MnO3 thin films fabricated by laser molecular beam epi-taxy. It was found that the film deposited at lower oxygen pressure shows larger c-axis parameter,higher resistance,and more distinct electroresistance. These results reveal that the electroresistance of manganite thin films can be tuned by the conditions of film fabrication.

【关键词】 La0.9Sr0.1MnO3 thin film； electroresistance effect； laser molecular beam epitaxy；
【Key words】 La0.9Sr0.1MnO3 thin film； electroresistance effect； laser molecular beam epitaxy；
【基金】 the National Natural Science Foundation of China (Grant No. 10334070);the National Key Basic Research Program of China (Grant No. 2004CB619004)
  • 【文献出处】 Science in China(Series G:Physics,Mechanics & Astronomy) ,中国科学(G辑:物理学 力学 天文学)(英文版) , 编辑部邮箱 ,2008年03期
  • 【分类号】O484
  • 【被引频次】2
  • 【下载频次】14
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