【摘要】 采用溶胶-凝胶法(Sol-gel)在p_Si和Pt/Ti/SiO2/Si衬底上制备Bi3.25La0.75Ti2.94Nb0.06O12(BLTN)铁电薄膜,研究了BLTN薄膜的晶相结构、表面形貌、铁电性能、介电性能和C_V性能。结果表明:所制备的BLTN薄膜具有单一的层状钙钛矿结构,且为随机取向;高于650℃退火处理的BLTN薄膜表面平整致密;铁电性能测试显示较饱和的电滞回线;当退火温度为650℃时,其剩余极化Pr和Ec分别为24.6μC/cm2和96.8 kV/cm,明显优于Bi3Ti4O12(BIT)薄膜的铁电性能;室温下,当测试频率为10 kHz时,薄膜的介电常数为386,介电损耗为0.69%,具有良好的介电性能;C_V曲线为顺时针方向回滞,记忆窗口约为1.5 V,可以实现极化存储。更多还原

【Abstract】 Bi3.25La0.75Ti2.94Nb0.06O12 ferroelectric films were prepared on p-Si and Pt/Ti/SiO2/Si substrates by sol-gel method.The microstructure,ferroelectric properties,dielectric and C-V properties of BLTN films were investigated.The results show that the films exhibit a single perovskite phase and randomly oriented.As well as,the films are uniform and dense above 650 ℃.The well saturated ferroelectric hysteresis loops were obtained,the remnant polarization and coercive field of BLTN thin films reached to 24.6 μC/cm2 and 96.8 kV/cm,respectively at 650 ℃,it’s better than the BIT ferroelectric films.BLTN thin films also have good dielectric properties,dielectric constant and dielectric loss of the films at 10 kHz are 386 and 0.69% respectively.The C-V curve of BLTN thin films are exhibit clockwise,and the memory window is 1.5 V.更多还原