【摘要】 报道了用分子束外延(MBE)方法生长掺杂InGaAs的PIN InP/InGaAs/InP外延材料,通过台面制作、硫化处理、ZnS/聚酰亚胺双层钝化、电极生长等工艺,制备了256元正照射台面InGaAs线列探测器,278K时平均峰值探测率为1.33×1012cmHz1/2W-1.测试了不同钝化方式探测器典型I-V曲线和探测率,硫化可以减小探测器暗电流,ZnS/聚酰亚胺双层钝化效果最好.并对ZnS/聚酰亚胺双层钝化InGaAs探测器进行了电子辐照研究.256元InGaAs探测器阵列与两个CTIA结构128读出电路互连并封装,在室温时,焦平面响应率不均匀性为19.3%.成功实现了室温扫描成像,图像比较清晰.更多还原

【Abstract】 Based on doped-InGaAs MBE-grown PIN InP/InGaAs/InP epitaxial materials,256 element front-illuminated mesa InGaAs linear detectors was made by using the technics of mesa-making,sulfidation treatment,passivation with ZnS/polyimide double layers,and growth of electrode.The mean peak detectivity of the detectors is 1.33×1012 cmHz1/2W-1 at 278K.The typical I-V curves and detectivity of detectors with different passivation layers were measured.Sulfidation can reduce the dark current of detectors.The effect of passivation with ZnS/polyimide double layers is best.InGaAs detectors passivated with ZnS/polyimide double layers after electron radiation were also studied.256 element InGaAs detector array was connected with two CTIA-structure L128 read out integrate circuits and packaged.The mean ununiformity of responsivity is 19.3% at room temperature.Better image is achieved successfully by scanning technology at room temperature.更多还原