【摘要】 对Ar离子注入p型MCT的反型进行了分析。由于Ar离子是中性离子,注入后反型的机理是否与B离子注入到p型MCT反型机理一致?我们根据B离子注入到p型MCT的模型进行了Ar离子注入反型的假设。经过实验验证了经Ar离子注入后,退火前不显现结整流特性,退火后显示出结整流特性,得到了Ar离子注入p型MCT中的反型大致与B离子注入到p型MCT反型结果一致。Ar离子注入后产生了大量的缺陷,形成剩余的Hg间隙原子被衍生缺陷所捕获,退火使得Hg间隙原子从衍生缺陷中逃逸出来而呈现低浓度的背景施主,造成了p型MCT的反型。更多还原

【Abstract】 We have studied the Principle of Type Conversion in Ar ion implanted p-type Hg0.29Cd0.71Te.For Ar Ion is neutral,the Principle of Type Conversion in B ion implanted p-type Hg0.29Cd0.71Te is as same as Ar ion implanted? we supposed the Principle of Type Conversion of Ar ion implanted p-type Hg0.29Cd0.71Te depend on the modeling of B ion implanted p-type MCT.By study,we find that there is no conversion only after Ar ion implanted,after annealed,p-type Hg0.29Cd0.71Te has happened conversing.So we concluded that the Principle of Type Conversion in Ar ion implanted p-type MCT is same as B ion implanted p-type MCT.更多还原