【摘要】 对〈111〉方向的三块碲锌镉晶片进行了不同的机械磨抛、化学机械抛光、化学抛光,在相同的测量条件下用三维形貌干涉仪进行表面监测。比较了碲锌镉晶片不同的磨抛方法对碲锌镉晶片表面机械损伤的情况,开展了碲锌镉晶片不同的磨抛方法对损伤的去除程度的对比实验,进行了碲锌镉晶片表面粗糙度及平整度实现的研究。更多还原

【Abstract】 Different experiments on three Cadmium Zinc Telluride〈111〉 wafers were carried out by mechanical polishing,chemical mechanical polishing and chemical polishing.In the same conditions,the changes of surface of three wafers were test with 3D interferometer.Based on the different lapping and polishing process,to eliminate the machining damage of the wafers surface were compared,and the study of roughness of the wafers were performed.更多还原