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Design and simulation of charge sensitive preamplifier with CMOS FET implemented as feedback capacitor Cfp

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【作者】 WEMBE TAFO Evariste;

【Author】 WEMBE TAFO Evariste1,2 SU Hong1,GAO Yanni1 WU Ming1 1 Institute of Modern Physics,Chinese Academy of Sciences,Lanzhou 730000,China 2 Department of Physics,University of Douala,Cameroon

【机构】 Institute of Modern Physics,Chinese Academy of Sciences;

【摘要】 In this paper,to design a new preamplifier for optimum performances with charged-particle or heavy-ion detectors,the CMOS FET is implemented as a feedback capacitor Cfp,so that the entire system should be built only with MOSFET. This work is a revolution design because to realize an ASIC for a preamplifier circuit,the capacitor will also be included. We succeed after a simulation to maintain a rise time less than 3 ns,the output resistance less than 94 ? and the linearity almost good.

【Abstract】 In this paper,to design a new preamplifier for optimum performances with charged-particle or heavy-ion detectors,the CMOS FET is implemented as a feedback capacitor Cfp,so that the entire system should be built only with MOSFET. This work is a revolution design because to realize an ASIC for a preamplifier circuit,the capacitor will also be included. We succeed after a simulation to maintain a rise time less than 3 ns,the output resistance less than 94 ? and the linearity almost good.

【基金】 National Natural Science Fundation of China (10675153);in part by the Third World Academy of Sciences;in part by the Institute of Modern Physics, Chinese Academy of Sciences
  • 【文献出处】 Nuclear Science and Techniques ,核技术(英文版) , 编辑部邮箱 ,2008年04期
  • 【分类号】TN722.71
  • 【被引频次】4
  • 【下载频次】68
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